The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety . CNU = 8-lead, 6 x 8 mm CASON. T = lead. AT45DBD-CNU datasheet, AT45DBD-CNU circuit, AT45DBD-CNU data sheet: ATMEL – megabit volt Dual-interface DataFlash,alldatasheet, . AT45DBD-CNU – Flash Memory, Serial NOR, 64 Mbit, Pages x. Add to compare. Image is for Technical Datasheet: AT45DBD-CNU Datasheet.
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AT45DBD-CNU Atmel, AT45DBD-CNU Datasheet
Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages. The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register.
To allow for simple in-system reprogrammability, the AT45DBD does not require high input voltages for programming. The information in this document is provided in connection with Atmel products. Other algorithms can be used to rewrite portions of the Flash array.
Command Resume from Deep Power-down Figure Being able to reprogram the Sector Protection Register with the sector at45xb642d-cnu enabled att45db642d-cnu the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely. PUW Changed t from max Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector.
The algorithm will be repeated sequentially for each page within the entire array.
This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation. Master clocks in BYTE a. The algorithm above shows the programming of a single page. Page 21 Figure Sector Lockdown com- mand if necessary. Use Block Erase opcode 50H alternative.
Configuration Register is a user-programmable nonvolatile regis- ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes.
Main Memory Page Read Opcode: Main Memory Page to Buffer 1 or 2 Compare 7. The device operates from a single power supply, 2. The surface finish of the package shall be EDM Charmille All other trademarks are the property of their respective owners.
VCSL Changed t from max. Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus. All program operations to the DataFlash occur on a page by page basis Parts ordered with suffix SL are shipped in bulk with the page size set to bytes. The first 13 bits PA12 – PA0 of the bit address sequence specify which page of the main memory array to read, and the last 11 bits BA10 – BA0 of the bit address sequence specify the starting byte address within the page.
AT45DBDCNU | ATMEL Corporation Distributor | AT45DBDCNU Inventory
Therefore not possible to only program the first two bytes of the register and then pro- gram the remaining 62 bytes at a later time. Page 35 Table At45dn642d-cnu Power-down, the device will return to the normal standby mode.
The DataFlash is designed to No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. Page 53 Packaging Information Page 39 Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.
Page 37 Output Test Load Parts will have a or SL marked on them Copy your embed code and put on your site: Unless otherwise specified tolerance: Output Test Load The Block Erase function is not affected by the Chip Erase issue. To perform a buffer to main memory page program with built-in erase for the The device density is indicated using bits and 2 of the status register.