BUT11AF DATASHEET PDF

BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

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August 2 Rev 1.

Isc Silicon NPN Power Transistor

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Exposure to limiting values for extended periods may affect device reliability. Normalised power derating and second breakdown curves. Application information Where application information is given, it is advisory and does not form part of the specification.

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BUT11AF DATASHEET

Switching times waveforms with resistive load. Test circuit for VCEOsust. Dataseet the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

Stress above one or more of the limiting values may cause permanent damage to the device. Oscilloscope display for VCEOsust. These are stress ratings only and operation of the device at these or at any datashheet conditions above those given in the Characteristics sections of this specification is not implied.

Reverse bias safe operating area. UNIT – – 1. August 8 Rev 1.

BUT11AF Datasheet(PDF) – Savantic, Inc.

buut11af Typical DC current gain. August 7 Rev 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Test circuit inductive load. Region of permissible DC operation. Test circuit resistive load. Forward bias safe operating area.

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Switching times waveforms with inductive load. Product specification This data sheet contains final product specifications. August 4 Ptot max and Ptot peak max lines.

Extension for repetitive pulse operation. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. SOT; The seating plane is electrically isolated from but11qf terminals.

BUT11AF Datasheet

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Typical base-emitter saturation voltage. Typical base-emitter and collector-emitter saturation voltages.

Refer to mounting instructions for F-pack envelopes.

No liability will be accepted by the publisher for any consequence of its use.